page:p2-p1 plastic-encapsulate diodes switching diodes features low forward voltage : vf(3)=0.9v(typ.) fast reverse recovery time : trr=1.6ns(typ.) marking : f3 maximum ratings (ta=25 unless otherwise noted) parameter symbol limits unit non-repetitive peak reverse v ol t age v rm 85 v dc blocking voltage v r 80 v forward continuous current i fm 300 ma average rectified output current i o 100 ma power dissipation p d 150 mw junction temperature t j 125 storage temperature range t stg -55-125 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol min. typ. max. unit conditions reverse breakdown voltage v (br)r 80 v i r =100 a forward voltage v f1 0.60 v i f =1ma v f2 0.72 v i f =10ma v f3 0.9 1.2 v i f =100ma reverse current i r1 0.1 ua v r =30v i r2 0.5 ua v r =80v capacitance between terminals c t 0.9 3.0 pf v r =0,f=1mhz reverse recovery time t r r 1.6 4.0 ns i f =i r =10ma,i rr =0.1i r 1. anode 2. n.c. sot-23 3. cathode 1SS193 mako semiconductor co., limited 4008-378-873 http://www.makosemi.hk/ m a k o s e m i c o n d u c t o r c o . , l i m i t e d 4 0 0 8 - 3 7 8 - 8 7 3 h t t p : / / w w w . m a k o s e m i . h k /
page:p2-p2 plastic-encapsulate diodes typical characteristics 1SS193 mako semiconductor co., limited 4008-378-873 http://www.makosemi.hk/ m a k o s e m i c o n d u c t o r c o . , l i m i t e d 4 0 0 8 - 3 7 8 - 8 7 3 h t t p : / / w w w . m a k o s e m i . h k /
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